Design and characterization of Se/Nb2O5 interfaces as high infrared- absorbers and high frequency band filters

Basit Öğe Kaydı
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2025-04-18T06:46:55Z
dc.date.available2025-04-18T06:46:55Z
dc.date.issued2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractHerein a new class of optoelectronic devices beneficial for infrared light absorption and high-frequency application in the terahertz frequency domain are designed and fabricated. The devices are formed by coating a highly transparent thin layer of Nb2O5 onto a selenium-thin film to form Se/Nb2O5 (SNO) optical interfaces. Although coating of Nb2O5 nanosheets decreased the crystallite sizes and increased the strain and defect concentration in the hexagonal structured Se films, they successfully increased the light absorption by ≈148% in the infrared range of light. A blueshift in the energy band gap of Se from 2.02 to 2.30 eV is observed. The coating of the Nb2O5 onto Se suppressed the free carrier absorption in Se and Nb2O5. As dielectric active layers, SNO interfaces showed a major resonance dielectric peak centered at 1.67 eV. The optical conductivity and terahertz cutoff frequency analyses which are handled using the Drude-Lorentz approach revealed the highest drift mobility and free carrier concentration of 17.17 cm2 Vs−1 and 5.0 (Formula presented.) cm−3 when an oscillator of energy of 1.75 eV is activated. In addition, the terahertz cutoff frequency spectra which varied in the range of 4.0–131 THz showed the suitability of the SNO devices for terahertz technology and other optoelectronics.
dc.identifier.citationQasrawi, A. F., & Daragme, R. B. (2025). Design and Characterization of Se/Nb2O5 Interfaces as High Infrared‐Absorbers and High Frequency Band Filters. Crystal Research and Technology, 60(1), 2400194.
dc.identifier.doi10.1002/crat.202400194
dc.identifier.issn0232-1300
dc.identifier.issn1521-4079
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85210956944
dc.identifier.scopusqualityQ3
dc.identifier.urihttp://dx.doi.org/10.1002/crat.202400194
dc.identifier.urihttps://hdl.handle.net/20.500.12713/6369
dc.identifier.volume60
dc.identifier.wosWOS:001371769900001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorQasrawi, Atef Fayez
dc.institutionauthoridAtef Fayez Qasrawi / 0000-0001-8193-6975
dc.language.isoen
dc.publisherJohn wiley and sons inc
dc.relation.ispartofCrystal research and technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectEnhanced Absorption
dc.subjectNb2O5 Nanosheets
dc.subjectOptical Conduction
dc.subjectSe
dc.subjectTerahertz
dc.titleDesign and characterization of Se/Nb2O5 interfaces as high infrared- absorbers and high frequency band filters
dc.typeArticle

Dosyalar

Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.17 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu