Design and characterization of Se/Nb2O5 interfaces as high infrared- absorbers and high frequency band filters
Küçük Resim Yok
Tarih
2025
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
John wiley and sons inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Herein a new class of optoelectronic devices beneficial for infrared light absorption and high-frequency application in the terahertz frequency domain are designed and fabricated. The devices are formed by coating a highly transparent thin layer of Nb2O5 onto a selenium-thin film to form Se/Nb2O5 (SNO) optical interfaces. Although coating of Nb2O5 nanosheets decreased the crystallite sizes and increased the strain and defect concentration in the hexagonal structured Se films, they successfully increased the light absorption by ≈148% in the infrared range of light. A blueshift in the energy band gap of Se from 2.02 to 2.30 eV is observed. The coating of the Nb2O5 onto Se suppressed the free carrier absorption in Se and Nb2O5. As dielectric active layers, SNO interfaces showed a major resonance dielectric peak centered at 1.67 eV. The optical conductivity and terahertz cutoff frequency analyses which are handled using the Drude-Lorentz approach revealed the highest drift mobility and free carrier concentration of 17.17 cm2 Vs−1 and 5.0 (Formula presented.) cm−3 when an oscillator of energy of 1.75 eV is activated. In addition, the terahertz cutoff frequency spectra which varied in the range of 4.0–131 THz showed the suitability of the SNO devices for terahertz technology and other optoelectronics.
Açıklama
Anahtar Kelimeler
Enhanced Absorption, Nb2O5 Nanosheets, Optical Conduction, Se, Terahertz
Kaynak
Crystal research and technology
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
60
Sayı
1
Künye
Qasrawi, A. F., & Daragme, R. B. (2025). Design and Characterization of Se/Nb2O5 Interfaces as High Infrared‐Absorbers and High Frequency Band Filters. Crystal Research and Technology, 60(1), 2400194.
