ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6G technology applications

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dc.authoridhttps://orcid.org/0000-0001-8193-6975en_US
dc.authorscopusid6603962677en_US
dc.authorwosidR-4409-2019en_US
dc.contributor.authorQasrawi Atef Fayez
dc.contributor.authorDaragme Rana B.
dc.date.accessioned2025-04-18T08:39:23Z
dc.date.available2025-04-18T08:39:23Z
dc.date.issuedMart 2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized. The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these nanosheets with 500 nmthick ZnPc layer. Silver and platinum were used to form a Schottky and an ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/ Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS). TheseCMOSdevices showed light and frequency controlled charge accumulation, depletion and inversion mechanisms within the range of 1.0–50 MHz. The flat band and threshold voltages of the ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96 ´109 Jones and current responsivity exceeding 9.0 mAW−1 are recorded at biasing voltage of 4.5 V. Moreover ASZ devices displayed microwave resonator characteristics presented by negative capacitance effect, resonance – antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz nominating the device for 6G technology applications.en_US
dc.identifier.citation10.1088/1402-4896/ad36f8en_US
dc.identifier.uri10.1088/1402-4896/ad36f8
dc.identifier.urihttps://hdl.handle.net/20.500.12713/6587
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoengen_US
dc.publisherPhysica Scriptaen_US
dc.relation.isversionof10.1088/1402-4896/ad36f8en_US
dc.relation.journalphysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectn-Si/Au/p-ZnPc, CMOS, IR sensor, rectifier, 6 G technologyen_US
dc.titleZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6G technology applicationsen_US
dc.typearticleen_US

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