ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6G technology applications
Yükleniyor...
Tarih
Mart 2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Physica Scripta
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
Herein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized.
The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these
nanosheets with 500 nmthick ZnPc layer. Silver and platinum were used to form a Schottky and an
ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/
Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn
junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices
have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS).
TheseCMOSdevices showed light and frequency controlled charge accumulation, depletion and
inversion mechanisms within the range of 1.0–50 MHz. The flat band and threshold voltages of the
ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In
addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A
rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96 ´109 Jones and current
responsivity exceeding 9.0 mAW−1 are recorded at biasing voltage of 4.5 V. Moreover ASZ devices
displayed microwave resonator characteristics presented by negative capacitance effect, resonance –
antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz
nominating the device for 6G technology applications.
Açıklama
Anahtar Kelimeler
n-Si/Au/p-ZnPc, CMOS, IR sensor, rectifier, 6 G technology
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
Künye
10.1088/1402-4896/ad36f8
