Design and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologiet için istatistikler
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| Design and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologiet | 0 |
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| Aralık 2024 | 0 |
| Ocak 2025 | 0 |
| Şubat 2025 | 0 |
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