Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR Q3 and 6G technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlmotiri, R. A.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlgarni, Sabah E.
dc.date.accessioned2022-11-03T08:47:33Z
dc.date.available2022-11-03T08:47:33Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein the fabrication and practical applications of p-MgSe thin films as active p-layer of electronic devices are reported. MgSe films are prepared by a vacuum evaporation technique onto n-Si substrates under a vacuum pressure of 10–5 mbar. The films are morphologically, structurally, electrically and opto-electronically investigated. Having identified the work function of p-MgSe as 6.74 eV, the role of Ag, C, Au and Pt metal contacts on the performance of the n-Si/ p-MgSe (SM) diodes are studied. It is observed that high rectification ratios of?104 and 102 are achieved at an applied voltage of 3.0 V for the Ag/SM/C and Ag/SM/Ag diode structures, respectively. In addition, a current responsivity to visible and infrared light of?0.70 A W?1 is observed for the Ag/SM/Ag channels. The noise equivalent ratios, the external quantum efficiency and the detectivity of the Ag/ SM/Ag diodes suit requirements of visible light and infrared communication detectors. Moreover, studies of the capacitance-voltage characteristics showed capacitor characteristics. The depleting of the Ag/SM/Ag capacitors is possible up to 50 MHz. Furthermore, analyzing the capacitance, resistance and cutoff frequency spectra have shown that the Ag/SM/Ag device channels can perform as negative resistance sources with cutoff frequency values that suits 6G technology requirements.en_US
dc.identifier.citationAlmotiri, R A.,Qasrawi, A F.,Algarni, Sabah E.(2022). Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR Q3 and 6G technologies. Physica Scripta. doi:10.1088/1402-4896/ac9be8en_US
dc.identifier.doi10.1088/1402-4896/ac9be8en_US
dc.identifier.scopus2-s2.0-85141920818en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ac9be8
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3217
dc.identifier.wosWOS:000878378100001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMgSeen_US
dc.subjectThermal Evaporationen_US
dc.subjectVLCen_US
dc.subjectPhotosensorsen_US
dc.subjectBand Offseten_US
dc.titleAg/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR Q3 and 6G technologiesen_US
dc.typeArticleen_US

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