Enhanced performance of Pb/FeSe2 interfaces designed for electrical applications
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Tarih
Mart 2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Applied Physics A materials science and processing
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
In this work, iron selenide layers are deposited onto glass and lead substrates to perform as terahertz filters. The layers are
deposited by the thermal evaporation technique under a vacuum pressure of 10–
5 mbar. Glass/FeSe2 (GFS) and Pb/FeSe2
(PFS) films are structurally, morphologically and electrically characterized. The atomic composition of the GFS films
contained excess selenium that reacted with Pb forming a PbSe layer. This layer induced the crystallinity of iron selenide.
The preferred crystal structure of FeSe2
was cubic with cell parameters of a = b = c = 3.04 Å and space group Pm3m .
Lead substrates increased the room temperature electrical conductivity of GFS films from of 1.52 ×10−5(Ω cm)−1 to 6.88
×10−2(Ω cm)−1 . Analyses of the electrical conduction mechanism in the temperature range of 25–330 K have shown that
coating the films onto Pb substrates shifted the accepter level from 182 to 58 meV, decreased the degree of structural disorder,
shorten the average hopping range from 59 to 19 Å and increased the density of localized states near Fermi level by two
orders of magnitude. The conductivity of PFS films exhibited degenerate semiconductor characteristics in the temperature
range of 120–28 K. This feature is followed by an evidence of exhibiting superconductivity at critical temperatures lower
than 24 K. On the other hand the impedance spectroscopy measurements in the driving signal frequency domain of 0.01–1.0
GHz have shown that Pb/FeSe2/Ag interfaces can perform as band filters showing microwave cutoff frequency values reaching
100 GHz at driving signal frequency of 1.0 GHz. These band filters are ideal for 6G technology nominating PFS films
for high frequency applications.
Açıklama
Anahtar Kelimeler
Pb/FeSe2 · Variable range hopping · Superconductivity · Induced crystallinity · 6G technology
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
130
Sayı
2
Künye
https://doi.org/10.1007/s00339-023-07268-8
