Barium oxide-based photodetectors engineered for visible light and near-infrared communication applications

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dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2025-06-18T13:23:51Z
dc.date.available2025-06-18T13:23:51Z
dc.date.issued2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractThermally deposited p-type barium oxide (BaO) thin films, coated with a 50-nm-thick silicon oxide (p-SiO2) protective layer, are employed as photodetectors. In a vacuum environment with a pressure of 10(-)5 mbar, stacked layers of p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document} BaO and p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document} SiO2 are grown onto n-type Si substrates. Structural investigations revealed the preferred growth of the tetragonal phase of BaO. Temperature-dependent electrical resistivity and optical absorption measurements determined a work function of 4.29 eV for p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document} BaO. Additionally, the design of the energy band diagram indicated an almost negligible built-in potential at the -Si/p-BaO interface. The resulting n-Si/p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document} BaO/p-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$p-$$\end{document} SiO2 photodetectors demonstrated high current responsivities of 0.24 A/W, 0.17 A/W, and 4.5 A/W under illumination with blue, red, and near-infrared (NIR) light, respectively. Corresponding external quantum efficiency percentages exceeded 69%, 34%, and 580%. Furthermore, the calculated photodetector parameters, including specific detectivity, noise equivalent power, linear dynamic range, and time-dependent current growth/decay cycles, confirmed the suitability of the proposed devices for visible light and NIR communication technologies.
dc.identifier.citationQasrawi, A. F., & Daragme, R. B. (2025). Barium Oxide-Based Photodetectors Engineered for Visible Light and Near-Infrared Communication Applications. Journal of Electronic Materials, 1-12.
dc.identifier.doi10.1007/s11664-025-12029-9
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.scopus2-s2.0-105006411537
dc.identifier.scopusqualityQ2
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-025-12029-9
dc.identifier.urihttps://hdl.handle.net/20.500.12713/7319
dc.identifier.wosWOS:001494025400001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorQasrawi, Atef Fayez
dc.institutionauthoridAtef Fayez Qasrawi / 0000-0001-8193-6975
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of electronic materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectn-Si/p - BaO Interfaces
dc.subjectPhotodetectors
dc.subjectNIR
dc.subjectVLC
dc.subjectResponsibility
dc.subjectEQE%
dc.titleBarium oxide-based photodetectors engineered for visible light and near-infrared communication applications
dc.typeArticle

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