In Situ Monitoring of Crystallinity of FeSe2 Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

Basit Öğe Kaydı
dc.authorid0000-0001-8193-6975
dc.authorscopusid6603962677
dc.authorwosidR-4409-2019
dc.contributor.authorLaila H. Gaabour, Atef Fayez Qasrawi, and Seham R. Alharbi
dc.date.accessioned2025-04-18T10:31:49Z
dc.date.available2025-04-18T10:31:49Z
dc.date.issued04/07/2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractHerein stacked layers of iron selenide (FeSe2) thin films are deposited by the physical evaporation technique and thermally annealed. An in situ monitoring of the crystallinity during the annealing process has shown that the crystallinity is reached at 100 °C. The crystallinity of the films that preferred the orthorhombic phase is enhanced with increasing annealing temperature. Evidences about the improved crystallinity are presented by the increased crystallite and grain sizes, decreased microstrain values, decreased stacking faults, and decreased defect densities with increasing annealing temperature. Optical investigations have shown impressive effect of the annealing process on the optical reflectance, optical contrast, and light absorbability. Namely, respective improvement percentages exceeding 170%, 64%, and 140% is achieved near E≈2 eV for samples annealed at 200 °C for 20 min. Both direct and indirect optical transitions are dominant in the film. In addition the annealing increased the dielectric constant in the spectral range of 1.17–4.20 eV. Maximum dielectric enhancement by 214% is reached near ≈2.10 eV. Moreover, the annealing process increases the optical conductivity and drift mobility of the FeSe2 films. The improvement in the crystallinity that resulted in enhanced optical properties makes the thermally annealed FeSe2 films promising for optoelectronic technology applications.
dc.identifier.doiDOI: 10.1002/crat.202400097
dc.identifier.startpage2400097 (1 of 9)
dc.identifier.urihttps://hdl.handle.net/20.500.12713/7107
dc.identifier.volume59
dc.institutionauthorQasrawi , Atef Fayez
dc.institutionauthorid0000-0001-8193-6975
dc.language.isoen
dc.publisherCrystal Research and Technology, Wiley
dc.relation.ispartofCrystal Research and Technology,
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectdielectric
dc.subjectenhanced optical conduction
dc.subjectFeSe2
dc.subjectorthorhombic
dc.subjectthermal annealing
dc.titleIn Situ Monitoring of Crystallinity of FeSe2 Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
309-2024-15- In Situ Monitoring of Cryst. FeSe2 Films (Atef, Layla, Seham) CRT publıshed.pdf
Boyut:
1.69 MB
Biçim:
Adobe Portable Document Format
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.17 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu